Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures
نویسندگان
چکیده
Semiconductor spintronics is promising because it potentially allows creating data storages and processing elements that are smaller and consume less energy than present charge-based microelectronic devices. Silicon is an ideal material for spintronic applications due to the long spin lifetime in the bulk material. However, large spin relaxation was experimentally observed in gated silicon structures [1].
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